纳米Cu_2O/碳纳米管复合膜电极制备及其光电性能  

Preparation and Photoelectric Properties of Cu_2O/CNT Complex Film

作　　者：褚道葆[1] 郑鹏[1] 卢嘉[1] 徐迈[1] 

机构地区：[1]安徽师范大学化学与材料科学学院,安徽省功能性分子固体重点实验室,安徽芜湖241000

出　　处：《安徽师范大学学报（自然科学版）》2009年第2期138-141,共4页Journal of Anhui Normal University(Natural Science)

基　　金：国家自然科学基金(No.20476001);安徽省自然科学基金(No.070414160)

摘　　要：以铜醇盐为原料,搀杂碳纳米管(CNT)采用溶胶-凝胶法在FTO玻璃基片上制备Cu2O/CNT薄膜,通过X射线衍射仪,电镜等分析和表征,确定了Cu2O/CNT薄膜的性质和结构;并对CNT加入量的控制来研究膜阻抗的变化和光电催化性能的改变.通过循环伏安和交流阻抗测试表明Cu2O/CNT复合膜有更低的膜阻抗和优异的催化活性,在偏压-0.5V的条件下膜的光电流可以达到0.15mA.由此证明了CNT的搀杂有效的提高膜电极的光电催化活性和电导率.Cu2O/CNT complex film were successfully synthesized by the sol-gel method using Cu（OEt）2 and carbon nanotube as precursors. The composition and morphology of complex film were characterized by using X- ray diffraction （XRD） and scanning electron microscopy （SEM）; the change of impedance and photoelectric properties was studied by controlling carbon content in film. The photocurrent-time and electrochemical impedance spectroscopy（EIS） experiments of Cu2O/CNT were also performed. The results showed that the electrochemical impedance of film was much small and photoelectrocatalytic activity was perfect. The photocurrent can reach 0. 15 mA at - 0. 5V vs SCE. The high photoelectrocatalytic activity and high conductance can be attributed to the CNT effect among nanocomposite.

关 键 词：氧化亚铜 碳纳米管 光电催化 阻抗 

分 类 号：O646[理学—物理化学]