非晶硅微测辐射热探测器的现状与发展  

Recent Development and Status of Amorphous Silicon Microbolometers

作　　者：龚宇光[1] 李伟[2] 蒋亚东[2] 陈超[1] 蔡海洪[1] 李志[1] 

机构地区：[1]电子科技大学光电信息学院,成都610054 [2]电子科技大学电子薄膜与集成器件国家重点实验室,成都610054

出　　处：《半导体光电》2009年第2期172-177,共6页Semiconductor Optoelectronics

摘　　要：基于非晶硅薄膜材料的微测辐射热探测器凭借其成本低、结构简单、可大规模生产等优势,在过去十几年间发展迅速,其焦平面阵列由最初的160×120小规模发展到目前的1024×768大规模,像元间距也由50μm减少到17μm。简要介绍了作为微测辐射热探测器的热敏电阻材料的优缺点,重点评述了具有代表性的非晶硅微测辐射热探测器的研究现状及发展趋势。With the advantages of low cost, simple structure and mass production, uncooled amorphous silicon microbolometers have been developed rapidly over the past decades. The scale of focal plane arrays was increased from 160 × 120 to 1 024 × 768, while the scale of pixel pitch was decreased from 50 μm to 17 μm. In this paper, some characteristics of the sensitive membrance materials of uncooled amorphous silicon microbolometers were evaluated, and the status and development trends of some typical amorphous silicon microbolometers both at home and abroad was introduced and summarized extensively.

关 键 词：非晶硅 微测辐射热探测器 阵列结构 性能特点 发展趋势 

分 类 号：TN214[电子电信—物理电子学]