320×256 InGaAs短波红外焦平面阵列探测器  

320×256 InGaAs Short Wave Infrared Focal Plane Arrays Detector

作　　者：高新江[1] 张秀川[1] 唐遵烈[1] 陈扬[1] 蒋利群[1] 陈红兵[1] 

机构地区：[1]重庆光电技术研究所,重庆400060

出　　处：《半导体光电》2009年第2期178-182,190,共6页Semiconductor Optoelectronics

基　　金：中国电子科技集团公司预研部资助项目

摘　　要：研制了320×256InGaAs焦平面阵列（FPA）探测器，它由InGaAs光电二极管阵列（PDA）与SiCMOS集成读出电路（ROIC）通过In凸点倒焊技术混合集成。背照射工作方式下其响应光谱范围为0．9～1．7μm。为实现InGaAsPDA与所设计的可调积分电容跨阻抗反馈放大器接口电路良好匹配，分析讨论了InGaAs光电二极管响应度、暗电流、结电容等光电特性对表征InGaAsFPA的主要性能指标的影响，优化了InGaAs光电二极管单元结构设计。采用优化结果研制的320×256InGaAsFPA，在室温下的峰值探测率达到6×10^12cm·Hz1/2·W^-1，动态范围达到68dB。320×256 InGaAs short wave infrared（SWlR） focal plane arrays（FPA） detector was fabricated. Through indium bump-flip-chip-bonding techniques, the InGaAs photodiode array （PDA） was hybrid-integrated to a silicon CMOS readout integrated circuit（ROIC）. The array is backside-illuminated with reponse spectral of 0. 9-1. 7 μm due to the bandgap of the In0. 35 Ga0.53 As active layer and absorption in the indium phosphide（InP） substrate. For implements of the electrical characteristics matches between detector arrays and the designed interface circuit of capacitive feedback transimpedance amplifier（CTIA） in which the integration capacitor was adjustable, the influences of InGaAs photodiode＇s optoelectronic characteristics on main performance of the FPA are discussed. Taking into account the key parameters such as responsivity, dark current and junction capacitance of photosensitive element, the optimized structure of PDA is achieved. Make use of optimization results, the peak dectivity and dynamics range of the developed 320× 256 InGaAs FPAs reaches 6.0 ×10^12 cm · Hz1/2· W^-1 and 68 dB at room temperature.

关 键 词：320×256 InGaAs焦平面 等效输人噪声电子 峰值探测率 动态范围 

分 类 号：TN362[电子电信—物理电子学]