金属有机化合物化学气相沉积法制备铱薄膜的研究  

Iridium Film Prepared by Metal-Organic Chemical Vapor Deposition

作　　者：蔡宏中[1] 胡昌义[1] 陈力[1] 王云[1] 

机构地区：[1]昆明贵金属研究所,云南昆明650106

出　　处：《稀有金属》2009年第2期200-204,共5页Chinese Journal of Rare Metals

基　　金：国家自然科学基金资助项目(50771051);云南省自然科学基金资助项目(2004E0064M)

摘　　要：以乙酰丙酮铱为前驱体,采用金属有机化合物化学气相沉积(MOCVD)技术在钼基体上制备了铱薄膜。研究了铱的沉积速率与基体温度、乙酰丙酮铱的加热温度和运载气体(Ar)流速等沉积参数的关系。铱薄膜的沉积速率与沉积温度之间的关系不符合Arrhenius方程:沉积速率与绝对温度的倒数呈抛物线关系,当温度为750℃时,铱的沉积速率达到最大值,基体温度对薄膜质量有显著影响;随着以乙酰丙酮铱加热温度的升高,铱的沉积速率直线增加;而Ar流速的增大则显著减小铱的沉积速率。Ir films were prepared by metal-organic chemical vapor deposition （MOCVD） method using iridium tri-acetylacetonate precursors on molybdenum substrates. The effects of substrate temperature, precursor temperature and flow of argon on deposition rates of iridium were determined. The relationship between the deposition rate and the substrate temperature did not accord with Arrhenius formula, but a parabola relation. The deposition rate of iridium reached a maximum value at 750℃, and the substrate temperature heavily affected the film properties. The deposition rate increased linearly with the temperature rising of iridium tri-acetylacetonate, and decreased obviously with the increasing flow of argon.

关 键 词：金属有机化合物化学气相沉积 铱 薄膜 

分 类 号：TF834[冶金工程—有色金属冶金]