Bloch线存储功能芯片专用电路设计  

Specific Electronic Circuit Design of Functional Chips for Bloch Line Memory

作　　者：陈善宝[1] 张志强[1] 

机构地区：[1]华中理工大学固体电子学系,430074

出　　处：《华中理工大学学报》1998年第1期78-81,共4页Journal of Huazhong University of Science and Technology

摘　　要：研究了场存取方式的Bloch线存取功能芯片结构，设计了配套的读写操作专用时序脉冲电路，着重分析了电路元器件参数对长下降沿梯形波变换的影响以及时序脉冲幅度、上升沿、下降沿等对读写操作区的影响，为场存取功能芯片设计提供了重要依据．Functional chip structure with field access for Bloch line memory is studied. Specific sequenced pulsc circuits for the chips are designed for read and write operation. Emphasis is laid on the analysis of both the effects of the parameters of electronic components on the transformation of waveform to trapezoidal ones with long falling edge and the effects of sequenced pulse amplitude, rising edge, falling edge on the read and write operating space.

关 键 词：Bloch线存储 芯片 电路 读写功能 磁泡存贮器 

分 类 号：TP333.33[自动化与计算机技术—计算机系统结构]