ZnO掺杂对PVK∶Ir(ppy)_3体系发光特性的影响  

Influence of ZnO on the Luminescence Properties of PVK∶Ir(ppy)_3 Systems

作　　者：杨少鹏[1] 邱晓丽[1] 赵方超[1] 秦向东[1] 庞学霞[1] 傅广生[1] 

机构地区：[1]河北大学物理科学与技术学院,保定071002

出　　处：《人工晶体学报》2009年第2期317-320,共4页Journal of Synthetic Crystals

基　　金：国家自然科学基金(No.60678006);河北省博士基金(No.06547002D-4);河北省自然科学基金(No.E2007000196)

摘　　要：以无机纳米颗粒ZnO作为电子传输材料,并以不同质量比掺杂到PVK∶Ir(ppy)3体系作为发光层制成一系列磷光器件,器件结构为:ITO/PVK∶Ir(ppy)3∶ZnO(100∶1∶x)/BCP/Alq3/Al,ZnO的掺杂浓度x分别为0%,1%,2%,5%,10%,研究了它们的电致发光特性。结果表明:合适比例ZnO掺杂可以改善器件的发光特性,ZnO的最佳掺杂量为1%,此时器件的相对发光强度是未掺杂的器件的4倍,器件的启亮电压也由未掺杂时的15.5V降到了10.5V。当掺杂浓度较大时,电子传输过多在电极另一侧形成漏电流,没有在发光层内进行电子与空穴有效复合,没有对发光起到作用,导致器件的发光性能下降。Different ratio of ZnO, a good electron-transporting inorganic material, doped with the PVK：Ir（ppy）3 system as emitting layer. The structure of the devices used was ITO/PVK∶Ir（ppy）3∶ZnO（100∶1∶x）/BCP/Alq3/Al. The doping weight ratio of ZnO was 0%,1%,2%,5%, 10%. The luminescence properties of the devices were investigated. An appropriate concentration of ZnO doping in the PVK∶Ir（ppy）3 system can improve the luminescence properties of polymer light-emitting diodes. The best doping level of ZnO was 1 %, at which the luminescence intensity of the device was 4 times that of the undoped device, and the threshold voltage was decreased from 15.5 V to 10.5 V. The brightness of the devices decreases when the doping ratio of ZnO too large to 10%.The reason is that superabundant electrons get to the opposite electrode as sink current, which are not recombination with the holes in the emitting layer, useless to luminesce.

关 键 词：磷光 有机电致发光 ZNO 

分 类 号：TN383[电子电信—物理电子学]