HgInTe晶片表面化学抛光研究  

Study on Surface Chemical Polishing of HgInTe Wafers

作　　者：杨杨[1] 王领航[1] 介万奇[1] 王亚彬[1] 傅莉[1] 

机构地区：[1]西北工业大学凝固技术国家重点实验室,西安710072

出　　处：《人工晶体学报》2009年第2期535-538,共4页Journal of Synthetic Crystals

基　　金：国家高技术研究发展计划(863)(No.2007AA03Z442);西北工业大学博士创新基金(CX200606);西北工业大学研究生种子基金(Z200612)资助项目

摘　　要：对HgInTe(MIT)晶片表面化学抛光工艺进行了研究,采用不同浓度的Br2-C3H7ON以及Br2-MeOH作为抛光液对MIT晶片进行化学抛光后发现,5%Br2-C3H7ON抛光液的抛光速度平稳且易于控制,抛光3min后可以有效去除表面划痕,获得光亮表面,表面形貌达到最佳效果。AFM分析结果表明,5%Br2-C3H7ON抛光后的晶片表面粗糙度降低67%,平整度显著增加。相比之下,5%Br2-MeOH抛光液抛光速度过快,抛光后的表面形貌较差。The surface chemical polishing technique of HgInTe （MIT）wafers was investigated. Br2- C3H7ON and Br2-MeOH solutions with the different concentrations were used as the chemical polishing agent. The experimental results show that the wafers in 5% Br2-C3H7ON had a stable erosion rate, which could be easily controlled. The surface scratches were effectively removed and a shiny surface was obtained. Through AFM analysis, it was proved that the surface roughness could be reduced by about 67%. MIT wafers in 5% Br2-MeOH, however,was eroded very fast and had a rougher surface.

关 键 词：HgInTe 化学抛光 腐蚀速率 表面粗糙度 

分 类 号：O78[理学—晶体学]