双极型低压TTL参数计算及其综合方法  

Calculate parameter and synthesis for low-voltage TTL bipolar circuits

作　　者：方倩[1] 刘莹[2] 

机构地区：[1]同济大学电子与信息工程学院,上海201804 [2]黑龙江大学电子工程学院,哈尔滨150080

出　　处：《黑龙江大学自然科学学报》2009年第2期265-269,共5页Journal of Natural Science of Heilongjiang University

基　　金：黑龙江省教育厅科学技术研究项目(10531131);黑龙江省科技攻关计划项目(GC02A121)

摘　　要：因为很多便携式电子设备的发展,电路元件需要是低压和低功耗的,最好用1.5V电池供电。然而至今1.5V低电压TTL门实现很困难。提出一个可克服此困难的新思路,并设计出1.5V低电压TTL门电路,进行参数计算。利用电路三要素理论提出1.5V低电压双极型电路综合方法,在此基础上求出新的低压D触发器元件级电路。最后经过电路实验证明TTL门电路的正确性。Because of the development of many portable electronic equipments, all the circuits components is necessary to be low-voltage and low-power, which supply source is best to used 1.5 V battery. However, the 1.5 V TTL gates is difficult to realize up to now. A new train of thought to overcome above difficulty was presented, and then designs a 1.5 V TTL gate and calculates the parameter of circuits. By means of the theory of three essential circuits elements, this paper preaents also a synthesis of TTL bipolar circuits on the basis of the 1.5 V TTL gates. In accordace with above theory a new low voltage D flip-flop circuits in component level are found out. above 1.5 V TTL gates circuits is showed to be true through experiments on circuits.

关 键 词：1.5 V低压TTL门电路 电路三要素理论 双极型电路综合方法 

分 类 号：TN431[电子电信—微电子学与固体电子学]