硅基非致冷混合式焦平面探测器阵列研究  

Study of Silicon-based Uncooled Hybrid Focal Plane Detector Array

作　　者：范茂彦[1,2] 姜胜林[1] 谢甜甜[1] 张光祖[1] 张丽芳[2] 

机构地区：[1]华中科技大学电子科学与技术系,湖北武汉430074 [2]玉溪师范学院,云南玉溪653100

出　　处：《红外》2009年第5期8-13,共6页Infrared

基　　金：国家"九七三"计划基金资助项目(2004CB619300);新世纪人才支持计划基金资助项目(NCET-04-0703)

摘　　要：本文报道一种32×48元高灵敏非致冷混合式焦平面探测器厚膜阵列。提出了一种采用掺杂钛酸锶钡厚膜作为敏感材料的硅基微机械加工电容式红外探测器像元结构,对其工作原理、器件性能优化设计与制作工艺流程进行了分析,得出了优化的结构参数。分析了影响器件性能的关键因素,给出了器件所用铁电材料的基本物理和电学特性参数以及器件的热隔离技术和相应参数。本结构的像元电容值增量接近相同敏感面的体材料红外探测器,减小了像元与衬底电极引线的寄生电容。采用这种结构的红外探测器阵列对电路的精度要求低,便于研制集成电路。该红外探测器阵列结构的设计思路,符合大阵列红外焦平面像元结构设计的发展趋势,为开展非致冷红外焦平面阵列探测器研究奠定了基础。A highly sensitive 32×48-element uncooled hybrid thick film focal plane array is presented. A silicon-based micromachined capacitive infrared detector pixel structure using a doped （Ba, Sr） TiO3 （BST） thick film as its sensitive material is proposed. By analyzing the operation principle of the pixel structure and the optimum design of detector performance and fabrication process, the optimal structure parameters are obtained. The key factors that have influences on detector performance are analyzed. The basic physical and electrical parameters of the ferroelectric material and thermal insulation technique used in the detector are given. The pixel structure has its capacitance increament approximately equal to that of the bulk infrared detector with a same active area, thus the parasitic capacitance between the the pixel and the electrode lead in the substrate is reduced. The design idea of this pixel structure meets the development trend of the large format infrared focal plane array and is useful to the development of new uncooled infrared focal plane array detectors.

关 键 词：非致冷 红外 掺杂钛酸锶钡 厚膜 焦平面探测器 

分 类 号：TN215[电子电信—物理电子学]