Cr^(3+)∶LiCaAlF_6晶体提拉法生长的研究  

CRYSTAL GROWTH OF Cr3+∶LiCaAlF6 BY CZOCHRALSKI TECHNIQUE

作　　者：张尚安[1] 魏世道[1] 韩奇阳 陶德节 冯朝鲜 

机构地区：[1]中国科学院安徽光学精密机械研究所

出　　处：《硅酸盐学报》1998年第2期243-248,共6页Journal of The Chinese Ceramic Society

基　　金：国家自然科学基金;国家"863"高技术资助

摘　　要：在国内首次报道熔体提拉法生长Ｃｒ３＋∶ＬｉＣａＡｌＦ６晶体的研究．晶体生长工艺中不用ＨＦ流动气氛和铂金炉膛．研制出质量较好的尺寸达（２０—２５）ｍｍ×（９０—１２０）ｍｍ的晶体．测定了晶体对８０９ｎｍ红外波段的吸收系数μ为１０－２量级，晶体中无ＯＨ－．对于熔体的富Ｌｉ组成。Single crystal of Cr3+∶LiCaAlF6 were grown for the first time in China by CZ technique without using pure Pt growth crucible and growing in a flowing atmosphere of HF. The dimension of crystals was up to (20—25)mm×(90—120)mm. The absorption coefficient of crystals at 809nm was 10-2cm-1 and no traces of OH- are found in the boules by infrared spectrum. Some problems, such as composition of melt enriched with LiF, oxidation of CrF3 and relationship between crystal defects and growth technology are discussed.

关 键 词：掺铬 氟化铝钙锂 提拉法 晶体生长 缺陷 激光 

分 类 号：TN244.05[电子电信—物理电子学] O782.5[理学—晶体学]