射频溅射Si膜的微结构与光学性质研究  

Microstructure and optical characteristics of Si thin films

作　　者：宋学萍[1] 王佩红[1] 孙兆奇[1] 

机构地区：[1]安徽大学物理与材料科学学院,安徽合肥230039

出　　处：《安徽大学学报（自然科学版）》2009年第3期65-68,共4页Journal of Anhui University(Natural Science Edition)

基　　金：国家自然科学基金资助项目(50642038);教育部博士点专项基金资助项目(20060357003);安徽省自然科学基金资助项目(01044901);安徽省教育厅科研基金资助项目(2004kj030);安徽省人才专项基金资助项目(2004Z029);安徽省信息材料与器件重点实验室(安徽大学)开放基金资助项目

摘　　要：采用射频磁控溅射法，在300℃衬底温度下制备了不同厚度的Si薄膜，用X射线衍射仪、紫外-可见分光光度计和原子力显微镜（AFM）分别对薄膜的微结构、光学性质及表面形貌进行了测试分析．结果表明：不同时间下制备的两膜均呈多晶状态；在中红外波段内出现了很强的Si—Si吸收峰；在紫外可见光范围，随着膜厚的增加，Si膜的透过率减弱；AFM测出Si膜的颗粒平均直径在5．65～8．41nm之间．Si thin films with different thicknesses were prepared at 300 ℃ by R. F. magnetron sputtering. X-ray diffractometer, ultraviolet -visible spectrometer and atomic force microscope were employed to examine microstructure, optical properties and surface morphology of the films. The results showd that the sputtered Si films were polycrystalline and a Si-Si absorption peak occurs in middle-infrared band. The transmittance of the film over ultraviolet-to-visible range decreased when film thickness increases. The Si particle size was estimated to be 5.65 -8.41nm from the AFM results.

关 键 词：射频磁控溅射 微结构 光学性质 原子力显微镜 

分 类 号：O484[理学—固体物理]