半导体激光器阵列偏振特性及其与应力关系的实验研究  

Experimental Study on the Polarization Characteristics and Their Relation with Stress in High Power Laser Diode Array

作　　者：沈力[1] 皮浩洋[1] 辛国锋[1] 封惠忠[1] 方祖捷[1] 陈高庭[1] 瞿荣辉[1] 

机构地区：[1]中国科学院上海光学精密机械研究所,上海201800

出　　处：《中国激光》2009年第5期1051-1056,共6页Chinese Journal of Lasers

基　　金：上海市自然科学基金(08ZR142400)资助课题

摘　　要：半导体激光器阵列(LDA)封装过程中引入的应力是影响器件阈值电流、光束特性和寿命的重要因素,需要一种简单有效的测试半导体激光器阵列应力的方法评估检测器件封装的质量。分析了应力改变电荧光偏振度(DOP)的一系列理论机制,并通过对条形激光器阵列在荧光条件下偏振特性的测量,研究了几种不同封装形式的条形激光器阵列的荧光偏振度随外加应力的变化性质。实验表明,半导体激光器阵列的偏振特性随驱动电流的增加变化明显,尤其是在阈值电流附近,偏振特性急剧变化。当有局部外力作用器件时,器件的荧光偏振度分布明显变化。通过对多个不同材料封装器件的荧光偏振度测试比较,发现不同的材料和封装形式对管芯引入的封装应力有明显的差别。The packaging induced stress is the main factor impacting the threshold current, the characteristics of laser, and the life time of laser diode arrays （LDA）. A method is imperative to measure the packaging induced stress in the LDA. The basic theory of stress affecting the electro-fluorescence degree of polarization （DOP） of LDA is stated. Electro-fluorescence DOP of high power LDA is measured. Results show that the DOP of LDA change obviously when the driving current grows. LD arrays in different packaging ways are tested. The DOP of the LDA under test is sensitive to stress. When pressure is applied to the center of the array, the distribution of DOP along the array undulates acutely. According to the DOP test of a lot of components, some characteristics within big packageinduced-stress are obtained. The result shows that the distribution of stress induced by different materials and different packaging ways is distinctive from each other.

关 键 词：半导体激光器 偏振度 阵列 应力 荧光 

分 类 号：TN248.4[电子电信—物理电子学]