硅材料的场致线性电光效应  

Electric-Field-Induced Linear Electro-Optic Effect in Silicon

作　　者：陈占国[1] 赵建勋[1] 张玉红[1] 贾刚[1] 刘秀环[1] 任策[1] 武文卿[1] 孙鉴波[1] 曹昆[1] 王爽[1] 时宝[1] 

机构地区：[1]集成光电子学国家重点联合实验室吉林大学电子科学与工程学院,吉林长春130012

出　　处：《光学学报》2009年第5期1336-1340,共5页Acta Optica Sinica

基　　金：国家自然科学基金(60506016;60476027);中俄合作交流(60811120023;60711120182)资助项目

摘　　要：从经典的极化理论出发,分析了直流电场、低频调制电场和光波电场共同存在时硅材料折射率的变化,从理论上揭示了场致线性电光效应的物理实质。以近本征硅材料为样品,采用金属-绝缘体-半导体样品结构,搭建了由塞纳蒙(Senarmont)补偿器改进成的横向电光调制系统。在硅材料空间电荷区内观测到显著的线性电光调制效应,系统的半波电压小于170 V,从实验上直接证实了硅材料中内建电场诱导的场致线性电光效应的存在。此外还观测到由克尔效应引起的二次电光调制信号,以及由场致光整流效应引起的、随线偏振光的方位角的二倍余弦变化的电信号。实验结果与经典极化理论的预期完全一致,也间接证实了硅材料中场致线性电光效应的存在。Based on classical polarization theory, the change of refractive index of silicon is analyzed when direct-current （dc） electric field, alternating-current （AC） modulation electric field, and optical field exist simultaneously, and the physical nature of the electric-field-induced linear electro-optic effect is theoretically indicated. Near-intrinsic silicon is constructed into a metal-insulator-semiconductor sample, and a transverse electro-optic modulation system composed of the modified Senarmont compensator is applied. The obvious linear electro-optic modulation signal is observed in the space charge region of silicon, and the half-wave voltage of the modulation system less than 170 V is estimated. The electric-field-induced linear electro-optic effect caused by the built-in electric field in silicon is experimentally demonstrated. In addition, the secondary electro-optic modulation signal generated by Kerr effect, and electric signal which changes with the cosine function of double azimuth of the linear polarizaed light and is induced by electric-field-induced optical rectification, are measured. These results are in good accordance with the classical polarization theory, and demonstrate the electric-field-induced linear electro-optic effect indirectly.

关 键 词：非线性光学 场致线性电光效应 场致光整流 克尔效应 横向电光调制 硅材料 

分 类 号：O436[机械工程—光学工程]