半导体量子点中浸润层跃迁与纯失相对Rabi振荡退相干的影响  

Effect of Wetting Layer Transition and Pure Dephasing on Rabi Oscillation Decoherence in Semiconductor Quantum Dots

作　　者：柳闻鹃[1,2] 刘绍鼎[2] 李建波[2] 郝中华[2] 

机构地区：[1]湖南工业大学理学院,湖南株洲412008 [2]武汉大学物理科学与技术学院,湖北武汉430072

出　　处：《光学学报》2009年第5期1391-1396,共6页Acta Optica Sinica

基　　金：国家自然科学基金(10534030)资助项目

摘　　要：理论上分析了半导体量子点中浸润层跃迁(包括泄漏和俘获两个过程)对Rabi振荡退相干的影响,含浸润层跃迁的粒子数运动方程可以很好地拟合实验结果。同时还对比分析了纯失相(pure dephasing)对Rabi振荡退相干的影响。分析表明,可以用简单的纯失相强度相关衰减因子来等效地分析复杂的多能级跃迁体系的退相干特性。The effect of wetting layer transition, including leakage and Auger capture processes, on Rabi oscillation decoherence process in semiconductor quantum dots is analyzed theoretically. The population dynamic equations of a quantum dot interacting with the wetting layer are deduced, and they fit well with the experimental result. The effect of pure dephasing on Rabi osciuation decoherence process is comparatively analyzed. The calculation results show that the simple intensity-dependent damping factor of pure dephasing can well describe the decoherence properties of complex multi-level system.

关 键 词：半导体量子点 RABI振荡 退相干 纯失相 

分 类 号：O431[机械工程—光学工程]