溶胶-凝胶法制备掺铝氧化锌透明导电膜的正交实验研究  

Preparation of ZnO:Al (ZAO) transparent conductive thin films by using the sol-gel method with orthogonal testing

作　　者：周鸣鸽[1] 战可涛[1] 

机构地区：[1]北京化工大学理学院,北京100029

出　　处：《北京化工大学学报（自然科学版）》2009年第3期71-74,共4页Journal of Beijing University of Chemical Technology(Natural Science Edition)

摘　　要：采用溶胶-凝胶法制备了掺铝氧化锌(ZnO:Al,ZAO)透明导电膜。对薄膜用X射线衍射(XRD)、扫描电镜(SEM)、四探针仪及紫外-可见分光光度计等分析测试手段进行了表征;通过正交实验探讨了溶胶浓度、铝离子的摩尔掺杂量以及退火温度等因素对其电阻率的影响。结果表明,薄膜电阻率随溶胶浓度、铝离子掺杂量的增加,呈现先减小后增大的趋势,并随退火温度的升高而减小,从而确定了制备ZAO透明导电膜的优化工艺条件为:溶胶浓度0.8mol/L,铝离子的掺杂量1.0%(摩尔分数),退火温度550℃。在优化工艺条件下制得的ZAO透明导电薄膜具有标准的ZnO纤锌矿结构,其电阻率为1.275×10-3Ω.cm,平均透光率达84%。ZnO：Al （ZAO） transparent conductive thin films have been prepared by a sol-gel method. The films were characterized by X-ray diffraction （XRD）, field-emission scanning electron microscopy （SEM）, UV-Vis spectrophotometry and a four-point probe instrument. The effects of factors such as sol concentration, Al dopant concentration （mole fraction） and annealing temperature on the resistivity of the ZAO film were studied. The results showed that with increasing sol concentration and Al dopant concentration, the resistivity at first decreased and then increased, whereas it decreased monotonically with increasing temperature. The optimal preparation conditions obtained by orthogonal testing are as follows： （1） sol concentration 0.8 mol/L; （2） Al dopant concentration 1.0% ; （3） annealing temperature 550 ℃. Under the optimal conditions, the resulting ZAO film had a polycrystalline hexagonal wurtzite structure with a resistivity of 1.275 × 10^-3 Ω cm and average optical transmittance of 84 %.

关 键 词：掺铝氧化锌 正交实验 溶胶-凝胶法 薄膜 

分 类 号：TN304.21[电子电信—物理电子学] TB383[一般工业技术—材料科学与工程]