Optoelectronic characterization of ZnS/PS systems  

作　　者：王彩凤 李清山 胡波 

机构地区：[1]Department of Physics and Electronics Science,Binzhou University [2]Physics Department,Ludong University [3]Flying College,Binzhou University

出　　处：《Chinese Optics Letters》2009年第5期432-434,共3页中国光学快报（英文版）

基　　金：supported by the Research Foundation of Young Scientists in Innovation Engineering of Binzhou University under Grant No.BZXYQNLG200703

摘　　要：ZnS thin films are deposited on porous silicon （PS） substrates with different porosities by pulsed laser deposition （PLD）. The photoluminescence （PL） spectra of the samples are measured at room temperature. The results show that the PL intensity of PS after deposition of ZnS increases and is associated with a blue shift. With the increase of PS porosity, a green emission at about 550 nm is observed in the PL spectra of ZnS/PS systems, which may be ascribed to the defect-center luminescence of ZnS films. Junction current- voltage （I-V） characteristics were studied. The rectifying behavior of I-V characteristics indicates the formation of ZnS/PS heterojunctions, and the forward current is seen to increase when the PS porosity is increased.ZnS thin films are deposited on porous silicon （PS） substrates with different porosities by pulsed laser deposition （PLD）. The photoluminescence （PL） spectra of the samples are measured at room temperature. The results show that the PL intensity of PS after deposition of ZnS increases and is associated with a blue shift. With the increase of PS porosity, a green emission at about 550 nm is observed in the PL spectra of ZnS/PS systems, which may be ascribed to the defect-center luminescence of ZnS films. Junction current- voltage （I-V） characteristics were studied. The rectifying behavior of I-V characteristics indicates the formation of ZnS/PS heterojunctions, and the forward current is seen to increase when the PS porosity is increased.

关 键 词：DISTILLATION Emission spectroscopy POROSITY Porous silicon Pulsed laser deposition Semiconducting silicon compounds Zinc sulfide 

分 类 号：O484.41[理学—固体物理]