活性元素在铜/金刚石复合材料中的应用  

Application of Active Element to Cu/diamond Composites

作　　者：邓丽芳[1] 朱心昆[1] 陶静梅[1] 尚青亮[1] 徐孟春[1] 

机构地区：[1]昆明理工大学,云南昆明650093

出　　处：《电子工艺技术》2009年第3期128-132,共5页Electronics Process Technology

摘　　要：新型电子封装用铜/金刚石复合材料中纯铜基和金刚石之间的界面结合强度十分低。为了获得好的界面结合强度以及好的热物理性能,在铜基中引入活性元素可以降低铜和金刚石的接触角,提高铜和金刚石的界面结合强度。概述了合金元素的选择以及Cr、Ti、B、V合金元素的加入对复合材料的润湿性及界面结合强度的作用。Cu/diamond composites as a new generation electronic packaging material has a very weak bonding. In order to get good bonding strength and good thermal properties, copper added to the strong carbide element can reduce the wetting angle of copper and diamond, enhance the interface bond strength. The choice of active elements and the properties are reviewed. And the application of reviewed. influence of active element（Cr,Ti,B,V） on the thermal addition active element in the Cu/diamond composites is

关 键 词：活性元素 铜-金刚石复合材料 界面结合强度 接触角 

分 类 号：TN604[电子电信—电路与系统]