单晶电子衍射的相对强度  

Relative intensity of single crystal electron diffraction

作　　者：孙瑞涛[1] 韩明[1] 于忠辉[1] 庞年斌[1] 尹文红[1] 

机构地区：[1]山东理工大学机械工程学院,山东淄博255049

出　　处：《电子显微学报》2009年第2期175-179,共5页Journal of Chinese Electron Microscopy Society

基　　金：山东省自然科学基金资助项目(Y2006F61);教育部留学回国人员科研启动基金

摘　　要：本文提出了一种新的表达电子衍射相对强度的经验公式。利用衍射斑点的灰度侧视分布图,详细研究了Ni-Fe-Ga合金中14M调制结构马氏体的选区电子衍射图。结果表明:晶体结构因数的对数值与其相应的衍射斑点灰度积分值差的函数呈线性关系。In the present work a new empirical formula has been proposed to express the relative intensity of electron diffraction spots. Selectedarea electron diffraction patterns of the 14M modulated martensite in a Ni-Fe-Ga alloy are investigated in detail by means of the prof＇fles of the diffraction spots. It is shown that the logarithm of the structure factor of crystal is proportional to the function of the change in the integral gray values of diffraction spots.

关 键 词：单晶电子衍射 相对强度 结构因数 

分 类 号：TG111[金属学及工艺—物理冶金]