一种新型两层垂直层叠结构的CMOS彩色传感器  

A Vertical Integrated Diode for CMOS Color Image Sensor

作　　者：陈远[1] 徐之海[1] 冯华君[1] 

机构地区：[1]浙江大学现代光学仪器国家重点实验室,浙江杭州310027

出　　处：《电子学报》2009年第5期970-974,共5页Acta Electronica Sinica

基　　金：国家自然科学基金(No.60577047)

摘　　要：本文研究了一种基于两层垂直层叠结构的新型CMOS色彩传感器,该器件可同时对偏蓝波段和偏红波段进行感应,配合绿/品红滤波片,实现彩色成像.由于该器件研制完全兼容于标准CMOS工艺,可以作为一种新型的CMOS彩色图像传感器像素的感光功能器件.它的基本原理是利用不同波长的光在硅材料中穿透深度的非线性分布,即:短波长的偏蓝可见光主要在表面被吸收,长波长的偏红光则主要在更深的位置被吸收.通过垂直层叠结构,配合两色滤波片,抽取不同深度的光生载流子,即可以得到相应波段的成像信息.经过数值仿真和实验测试表明,该传感器可以提供色彩信息,并且可以作为像素结构应用在CMOS图像传感器上,具有较大的实际意义.The vertical integrated diode can sense blue and red illumination simultaneously, it can provide full color information with green/magenta filter on it. It can also be the pixel of the CMOS image senor for its fully compatible with standard CMOS process. Its basic principle is to use the silicon＇ s differences of penetration depths of electromagnetic waves with different wavelengths, i. e., blue light with short wavelength is absorbed mainly at surface while red light with longer wavelength is absorbed deeper. Through extraction of photogenerated cartier at different depth by vertical integrated diode with two color filters, we get the full color image. The numerical simulation and the experimental device show that it can provide color information and can be applied in CMOS image sensor pixel design.

关 键 词：彩色成像 色彩传感器 CMOS成像传感器 垂直层叠结构 

分 类 号：TN36[电子电信—物理电子学]