Electronic transport properties of an (8,0) carbon/silicon-carbide nanotube heterojunction  

作　　者：刘红霞 张鹤鸣 张志勇 

机构地区：[1]Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices,School of Microelectronics,Xidian University [2]Institute of Information Science and Technology,Northwest University

出　　处：《Journal of Semiconductors》2009年第5期5-8,共4页半导体学报（英文版）

基　　金：supported by the Pre-Research Foundation from the National Ministries and Commissions(No.51308040203)

摘　　要：A two-probe system of the heterojunction formed by an （8, 0） carbon nanotube （CNT） and an （8, 0） silicon carbide nanotube （SiCNT） was established based on its optimized structure. By using a method combining nonequilibrium Green＇s function （NEGF） with density functional theory （DFF）, the transport properties of the het-erojunction were investigated. Our study reveals that the highest occupied molecular orbital （HOMO） has a higher electron density on the CNT section and the lowest unoccupied molecular orbital （LUMO） mainly concentrates on the interface and the SiCNT section. The positive and negative threshold voltages are ＋1.8 and -2.2 V, respectively.A two-probe system of the heterojunction formed by an （8, 0） carbon nanotube （CNT） and an （8, 0） silicon carbide nanotube （SiCNT） was established based on its optimized structure. By using a method combining nonequilibrium Green＇s function （NEGF） with density functional theory （DFF）, the transport properties of the het-erojunction were investigated. Our study reveals that the highest occupied molecular orbital （HOMO） has a higher electron density on the CNT section and the lowest unoccupied molecular orbital （LUMO） mainly concentrates on the interface and the SiCNT section. The positive and negative threshold voltages are ＋1.8 and -2.2 V, respectively.

关 键 词：carbon/silicon carbide nanotube heterojunction nonequilibrium Green＇s function transport properties 

分 类 号：TN304.12[电子电信—物理电子学]