High energy electron radiation effect on Ni and Ti/4H-SiC Schottky barrier diodes at room temperature  

作　　者：张林 张义门 张玉明 韩超 马永吉 

机构地区：[1]Microelectronic School,Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices,Xidian University

出　　处：《Chinese Physics B》2009年第5期1931-1934,共4页中国物理B（英文版）

基　　金：supported by the National Natural Science Foundation of China(Grant No 60606022);the Xian Applied Materials Foundation of China(Grant No XA-AM-200702);the Advanced Research Foundation of China(Grant No 9140A08050508)

摘　　要：This paper reports that Ni and Ti/4H-SiC Schottky barrier diodes （SBDs） were fabricated and irradiated with 1 MeV electrons up to a dose of 3.43 × 10^14 e/cm2. After radiation, the Schottky barrier height φB of the Ni/4H-SiC SBD increased from 1.20 eV to 1.21 eV, but decreased from 0.95 eV to 0.94 eV for the Ti/4H-SiC SBD. The degradation of φB could be explained by interface states of changed Schottky contacts. The on-state resistance Rs of both diodes increased with the dose, which can be ascribed to the radiation defects. The reverse current of the Ni/4H-SiC SBD slightly increased, but for the Ti/4H-SiC SBD it basically remained the same. At room temperature, φB of the diodes recovered completely after one week, and the RS partly recovered.This paper reports that Ni and Ti/4H-SiC Schottky barrier diodes （SBDs） were fabricated and irradiated with 1 MeV electrons up to a dose of 3.43 × 10^14 e/cm2. After radiation, the Schottky barrier height φB of the Ni/4H-SiC SBD increased from 1.20 eV to 1.21 eV, but decreased from 0.95 eV to 0.94 eV for the Ti/4H-SiC SBD. The degradation of φB could be explained by interface states of changed Schottky contacts. The on-state resistance Rs of both diodes increased with the dose, which can be ascribed to the radiation defects. The reverse current of the Ni/4H-SiC SBD slightly increased, but for the Ti/4H-SiC SBD it basically remained the same. At room temperature, φB of the diodes recovered completely after one week, and the RS partly recovered.

关 键 词：silicon carbide Schottky barrier diode electron radiation annealing effect 

分 类 号：TN311.7[电子电信—物理电子学] X591[环境科学与工程—环境工程]