Field electron emission from bunchy flake-like nano-carbon films  

Field electron emission from bunchy flake-like nano-carbon films

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作  者:王小平 王丽军 段新超 王隆洋 张雷 吕承瑞 雷通 

机构地区:[1]College of Science,University of Shanghai for Science and Technology

出  处:《Chinese Physics B》2009年第5期2078-2081,共4页中国物理B(英文版)

基  金:supported by the Shanghai Education Committee of China(Grant No 07ZZ95)

摘  要:This paper reports that bunchy flake-like nano-graphite crystallite films (BNGCFs) were deposited on Si substrates by using the microwave chemical vapour deposition technique. Furthermore the BNGCFs were characterized by x-ray diffraction spectra, scanning electron microscopy, Raman spectra and field emission (FE) I-V measurements, and a lowest turn-on field of 1.5 V/μm, and a high average emission current density of 30 mA/cm2 at a macroscopic electric field of 8.0V/μm were obtained. The J-E data did not follow the original Fowler-Nordheim (F-N) relation since they were not well represented in the F-N plot by a straight line. A model considering the F-N mechanism, and the statistic effects of FE tip structures has been applied successfully to explain all the FE data observed for E 〈 8.SV/μm.This paper reports that bunchy flake-like nano-graphite crystallite films (BNGCFs) were deposited on Si substrates by using the microwave chemical vapour deposition technique. Furthermore the BNGCFs were characterized by x-ray diffraction spectra, scanning electron microscopy, Raman spectra and field emission (FE) I-V measurements, and a lowest turn-on field of 1.5 V/μm, and a high average emission current density of 30 mA/cm2 at a macroscopic electric field of 8.0V/μm were obtained. The J-E data did not follow the original Fowler-Nordheim (F-N) relation since they were not well represented in the F-N plot by a straight line. A model considering the F-N mechanism, and the statistic effects of FE tip structures has been applied successfully to explain all the FE data observed for E 〈 8.SV/μm.

关 键 词:bunchy flake-like nano-graphite crystallites films chemical vapour deposition electronfield emission 

分 类 号:TB383.2[一般工业技术—材料科学与工程]

 

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