大功率LED的光衰机制研究  

Research on Mechanism of High-Power LED Luminous Attenuation

作　　者：张楼英[1,2] 周丽[1] 张家雨[1] 罗宗南[1] 崔一平[1] 

机构地区：[1]东南大学电子科学与工程学院先进光电子中心,南京210096 [2]淮安信息职业技术学院电子工程系,江苏淮安223003

出　　处：《半导体技术》2009年第5期474-477,共4页Semiconductor Technology

摘　　要：为了研究大功率LED的光衰机制,选用了一系列的大功率白光、蓝光发光二极管分别进行恒流点亮,在点亮不同时间阶段测量其光通量、发光谱及伏安特性。发现在光衰过程中,光通量有时会上升;通过LED光谱测定,发现光谱分布有明显变化;同时,pn结内阻也逐渐变大。研究表明大功率LED光衰有较为复杂的过程:其中荧光粉老化及pn结性能退化是最主要的。文章对此进行了初步的分析,为白光LED的应用及进一步研究白光LED衰减提供了参考。To study the mechanism about the luminous attenuation of high-power LEDs, a series of white and blue LEDs were lighted continuously under constant current, and the luminous flux, emission spectra and V/I characteristics were measured at different periods. In the process of luminous attenuation, luminous flux ascended abnormally sometimes. During the luminous attenuation, the emission spectrum varies significantly, and the resistance of pn junction is increased. This indicates that luminous attenuation of high-power LED is complex. Ageing of phosphors and deterioration of the LED luminescence are primary causes. The results will provide a reference to the application of white LED and for the further study.

关 键 词：大功率LED 光谱 光衰 伏安特性 

分 类 号：TN383.1[电子电信—物理电子学]