1N4626型齐纳二极管的低噪声关键技术研究  

Study on the Key Technology of 1N4626 Low-Noise Zener Diode

作　　者：刘兴辉[1] 刘通[1] 

机构地区：[1]辽宁大学物理学院沈阳市光电子功能器件与检测技术重点实验室,沈阳110036

出　　处：《半导体技术》2009年第5期478-481,共4页Semiconductor Technology

基　　金：辽宁省自然科学基金项目资助(20082050)

摘　　要：分析了二极管的噪声机理和降低噪声的措施,探索了低噪声齐纳二极管的特殊制作工艺,包括Si平面结加保护环、掺氯缓慢升降温氧化、CVD表面钝化、凸点电镀等。用此组合降噪工艺研制的1N4626型齐纳二极管噪声谱密度典型值达到0.11μV/(Hz)^(1/2)(2kHz频率点),比设计指标4.0μV/(Hz)^(1/2)低一个数量级。The noise mechanism and the effective measures to reduce noise were analyzed, and special preparation technology of low-noise Zener diode was explored including additional guard-ring structure, the chlorine-doped oxidation with temperature rising and falling slowly, CVD surface passivation, bump plating and so on. By using combination technologies, the typical noise spectral density for the 1 N4626 Zener diode is 0.11 μV/√Hz （2 kHz frequency）, which is an order of magnitude smaller than the noise index.

关 键 词：齐纳二极管 噪声 表面钝化 凸点电镀 保护环 

分 类 号：TN315.2[电子电信—物理电子学]