L波段Si微波脉冲功率晶体管射频加速寿命试验  

RF Accelerated Lifetime Test for L-Band Si Microwave Pulse Power Transistor

作　　者：黄雒光[1] 董四华[1] 刘英坤[1] 郎秀兰[1] 

机构地区：[1]中国电子科技集团公司第十三研究所,石家庄050051

出　　处：《半导体技术》2009年第5期494-497,共4页Semiconductor Technology

摘　　要：Si微波功率器件应用十分广泛,其可靠性直接影响使用设备的性能。以L波段Si微波脉冲功率晶体管为例,提出了一种基于Arrhenius模型的Si微波功率晶体管可靠性寿命评价方案。采用L波段Si微波脉冲功率晶体管在射频脉冲工作条件下(f=1.3GHz,Pin=40W,TW=150μs,D=10%)进行了壳温为200℃的高温加速老化试验,应用Arrhenius模型对试验结果进行了分析和计算。推导得出了L波段Si微波脉冲功率晶体管在室温(25℃)工作条件下的平均寿命为6.2×106h。Si microwave power transistor is widely used and its reliability has an important effect on the characteristics of the equipment. An evaluating method for the reliable lifetime of Si microwave power transistor was put forward based on the Arrhenius model. The accelerated fatigue experimentation was carried out under the working condition of RF pulse （f= 1.3 GHz, Pin = 40 W, TW = 150 μs, D = 10%, Tc = 200℃） for L-band Si microwave pulse power transistor. The experiment results are also analyzed and calculated using the Arrhenius model. The mean lifetime of the L-band Si microwave power transistor is 6.2 × 10^6 h at the working condition of room temperature （25 ℃ ）

关 键 词：硅微波脉冲功率晶体管 加速老化 可靠性 寿命试验 Arrhenius模型 

分 类 号：TN323.4[电子电信—物理电子学] TN306