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作 者:林晓辉[1] 孙元征[1] 杨决宽[1] 陈云飞[1,2]
机构地区:[1]东南大学,机械工程学院设计工程系,南京210096 [2]东南大学,MEMS教育部重点实验室,南京210096
出 处:《光子学报》2009年第5期1029-1034,共6页Acta Photonica Sinica
基 金:国家自然科学基金(50275026);江苏省自然科学基金(BK2002060)资助
摘 要:基于电子能带理论,以动力论的Fokker_Planck方程为基础,从微观层次对超短脉冲激光烧蚀绝缘体材料的机理进行分析研究.源项中分别考虑了雪崩电离、多光子电离机制,并考虑了电子能量与散射机制对电子弛豫时间的影响.建立了绝缘体烧蚀机理的耦合数学模型,其计算的激光烧蚀临界能量密度阀值与实验结果很好的吻合.定量描述了超短脉冲激光对绝缘体材料烧蚀微观过程的影响.Based on the Fokker-Planek equation of kinetic theory,the mechanism of ultrashort laser ablation of dielectrics was studied. A coupled model of the mechanism of ablation of dielectrics was developed. Avalanche ionization and multiphoton ionization were considered as the sources during the generation of free electrons. The impact of electron energy and scattering mechanism on electron relaxation time was taken into account. The calculated threshold damage fluenees were in good agreement with experimental results. The impact of ultrashort pulses on the ablation of dielectrics was described quantitatively.
分 类 号:TN249[电子电信—物理电子学]
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