量子阱共振腔增强型光电探测器的高功率特性  

High-Power Property of Resonant-Cavity-Enhanced Photodetectors Grown on GaAs

作　　者：朱彬[1] 韩勤[1] 杨晓红[1] 

机构地区：[1]中国科学院半导体研究所集成光电子国家重点实验室,北京100083

出　　处：《光子学报》2009年第5期1074-1079,共6页Acta Photonica Sinica

基　　金：中国高技术研究与发展计划(2007AA032421);中国重点基础研究发展计划(2006CB302802)资助

摘　　要：通过测量1.55μm量子阱共振腔增强型光电探测器的光电流随反向电压和光功率的变化关系,以及模拟能带结构、电场分布等特性,研究了量子阱共振腔增强型光电探测器的高功率特性.分析了光电流的产生机制,测量了1.064μm量子阱共振腔增强型光电探测器的光电响应,模拟了具有不同势垒高度的量子阱共振腔增强型光电探测器的光电响应.从实验和模拟两方面证明了量子阱的势垒高度是影响量子阱共振腔增强型光电探测器高功率特性的最主要因素.High-power property of quantum well resonant-cavity-enhanced photodetector （QW-RCE-PD） was investigated by measuring the photocurrent as function of reverse bias and optical power in 1.55 μm QW-RCE-PD and simulating energy band structure and electric field. The mechanism of photocurrent was analyzed. It is found that high recombination is the main cause of the saturation of photocurrent in devices which have high barrier in quantum well region. And it is proved that the barrier height of quantum well is the most important factor to affect high power property by measuring the photoelectric response of 1. 064μm QW-RCE PD and simulating photoelectric response of devices with different barrier height in quantum well.

关 键 词：共振腔增强型光电探测器 高功率 复合 势垒高度 

分 类 号：TN36[电子电信—物理电子学]