Fracture mechanics analysis on Smart-Cut~technology.Part 2:Effect of bonding flaws  

作　　者：Bin Gu Hongyuan Liu Yiu-Wing Mai Xi Qiao Feng ShouWen Yu 

机构地区：[1]Centre for Advanced Materials Technology (CAMT),School of Aerospace, Mechanical and MechatronicEngineering (AMME) J07, University of Sydney,Sydney, NSW 2006, Australia [2]Department of Engineering Mechanics,Tsinghua University, Beijing 100084, China

出　　处：《Acta Mechanica Sinica》2009年第2期197-203,共7页力学学报（英文版）

基　　金：supported by the Australian Research Council (ARC), the National Natural Science Foundation of China (10525210 and 10732050); 973 Project (2004CB619303)

摘　　要：In Part 2 of the paper on the Smart-Cut process, the effects of bonding flaws characterized by the size and internal pressure before and after splitting are studied by using fracture mechanics models. It is found that the bonding flaws with large size are prone to cause severe deviation of defect growth, leading to a non-transferred area of thin layer when splitting. In a practical Smart-Cut process where the internal pressure of bonding flaws is very small, large interfacial defects always promote defect growth in the splitting process. Meanwhile, increasing the internal pressure of the bonding flaws decreases the defect growth and its deviation before splitting. The mechanism of relaxation of stiffener constraint is proposed to clarify the effect of bonding flaws. Moreover, the progress of the splitting process is analyzed when bonding flaws are present. After splitting, those bonding flaws with large size and high internal pressure are vulnerable for the blistering of the thin film during high-temperature annealing.In Part 2 of the paper on the Smart-Cut process, the effects of bonding flaws characterized by the size and internal pressure before and after splitting are studied by using fracture mechanics models. It is found that the bonding flaws with large size are prone to cause severe deviation of defect growth, leading to a non-transferred area of thin layer when splitting. In a practical Smart-Cut process where the internal pressure of bonding flaws is very small, large interfacial defects always promote defect growth in the splitting process. Meanwhile, increasing the internal pressure of the bonding flaws decreases the defect growth and its deviation before splitting. The mechanism of relaxation of stiffener constraint is proposed to clarify the effect of bonding flaws. Moreover, the progress of the splitting process is analyzed when bonding flaws are present. After splitting, those bonding flaws with large size and high internal pressure are vulnerable for the blistering of the thin film during high-temperature annealing.

关 键 词：Smart-Cut technology Fracture mechanics Stress intensity factor Interfacial defect 

分 类 号：O411.1[理学—理论物理] U448.210.6[理学—物理]