Effects of modulation frequency on the structure and electrical characteristics of μc-Si:H films prepared by pulsed VHF-PECVD  

作　　者：王世锋 张晓丹 赵颖 魏长春 许盛之 孙建 耿新华 

机构地区：[1]Institute of Photo-electronic Thin Film Devices and Technology,Nankai University

出　　处：《Optoelectronics Letters》2009年第3期212-215,共4页光电子快报（英文版）

基　　金：supported by the National Basic Research Program of China(Grant No.2006CB202602,2006CB202603);the National High Technology Research and Development Program of China(Grant No.2007AA05Z436);the National Natural Science Foundation of China(Grant No.60506003)

摘　　要：Modulation frequency and pulse duty cycle are two key parameters of pulsed VHF-PECVD technology.An experimental study on the microcrystalline silicon materials prepared by pulsed VHF-PECVD technology in high deposition rate is presented.And combining the diagnosis of plasma process with optical emission spectroscopy(OES),the dependence of microstructure and electrical properties of thin films on the pulse modulation frequency is discussed in detail.Modulation frequency and pulse duty cycle are two key parameters of pulsed VHF-PECVD technology. An experimental study on the mierocrystalline silicon materials prepared by pulsed VHF-PECVD technology in high deposition rate is presented. And combining the diagnosis of plasma process with optical emission spectroscopy （OES）, the dependence of microstructure and electrical properties of thin films on the pulse modulation frequency is discussed in detail.

关 键 词：甚高频等离子体增强化学气相沉积 脉冲占空比 调制频率 微观结构 电学特性 薄膜 化学气相沉积技术 Si 

分 类 号：TN304.055[电子电信—物理电子学] TP23[自动化与计算机技术—检测技术与自动化装置]