涂层导体DyBiO_3(DBO)缓冲层的低温制备  

Low Temperature Processing Technology for Preparation of Potential DyBiO_3 Buffer Layers of Coated Conductors

作　　者：孙瑞萍[1] 李果[1] 蒲明华[1] 王文涛[1] 赵勇[1] 

机构地区：[1]西南交通大学材料先进技术教育部重点实验室,四川成都610031

出　　处：《稀有金属材料与工程》2009年第5期901-904,共4页Rare Metal Materials and Engineering

基　　金：国家自然科学基金(50672078);国家杰出青年基金(50588201);国家973项目(2007CB616906)

摘　　要：通过685～750℃之间进行低温成相，在LaAlO3（LAO）单晶基底上沉积得到了有较大应用前景的涂层导体DyBiO3（DBO）缓冲层。结果表明：所得的缓冲层C轴取向良好，致密、平整、无裂纹。当温度大于750℃时，DBO表面开始变得粗糙。沉积在DBO缓冲层上的YBCO超导层C轴织构的样品，样品表面平整均匀，超导转变温度在90K左右，临界电流密度大于1MA／cm^2。从工业应用角度讲，低温的缓冲层制备具有极大的经济优势，应用前景更为广泛。The DyBiO3 （DBO） buffer layer deposited on LaAlO3 （LAO） single crystal substrate was prepared by low temperature processing in the range of 685-750℃. It shows high c-axis texture, high compactness, smooth surface and crack-free, The DBO surface began to coarsen when the temperature was above 750℃.YBCO superconducting layer deposited on DBO-buffered LAO displays highly c-axis texture, high compactness and homogeneous microstructure. The superconducting transition is around 90 K, The critical current density is up to 1 MA/cm^2. From the view of industrialization, the technology of the low temperature processing shows great economical advantages and potential application future.

关 键 词：涂层导体 DyBiO3缓冲层 低温成相 

分 类 号：TM26[一般工业技术—材料科学与工程]