Electrically Pumped Room-Temperature Pulsed InGaAsP-Si Hybrid Lasers Based on Metal Bonding  

作　　者：陈挺 洪涛 潘教青 陈娓兮 程远兵 汪洋 马小波 刘卫丽 赵玲娟 冉广照 王圩 秦国刚 

机构地区：[1]State Key Lab for Mesoscopic Physics and School of Physics, Peking University, Beijing 100871 [2]Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences [3]State Key Laboratory of Functional Materials for Informatics, Laboratory of Nano Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050

出　　处：《Chinese Physics Letters》2009年第6期151-153,共3页中国物理快报（英文版）

基　　金：Supported by the National Natural Science Foundation of China under Grant Nos 10874001, 50732001, 10674012 and 60877022, and the National Basic Research Program of China under Grant No 2007CB613402.

摘　　要：A pulsed InGaAsP-Si hybrid laser is fabricated using metal bonding. A novel structure in which the optical coupling and metal bonding areas are transversely separated is employed to integrate the silicon waveguide with an InGaAsP multi-quantum well distributed feedback structure. When electrically pumped at room temperature, the laser operates with a threshold current density of 2.9 kA/cm^2 and a slope efficiency of 0.02 W/A. The 1542nm laser output exits mainly from the Si waveguide.A pulsed InGaAsP-Si hybrid laser is fabricated using metal bonding. A novel structure in which the optical coupling and metal bonding areas are transversely separated is employed to integrate the silicon waveguide with an InGaAsP multi-quantum well distributed feedback structure. When electrically pumped at room temperature, the laser operates with a threshold current density of 2.9 kA/cm^2 and a slope efficiency of 0.02 W/A. The 1542nm laser output exits mainly from the Si waveguide.

关 键 词：gamma-ray bursts GAMMA-RAYS RELATIVITY 

分 类 号：TN248.4[电子电信—物理电子学] V261.35[航空宇航科学与技术—航空宇航制造工程]