Electrical Characteristics of Co/n-Si Schottky Barrier Diodes Using I -- V and C -- V Measurements  

作　　者：G. Güler OE. Güllü S. Karatas OE. F. Bakkaloglu 

机构地区：[1]Department of Physics, Faculty of Education University of Adiyaman, 02100 Adiyaman, Tarkey [2]Department of Physics, Faculty of Sciences and Arts, University of Barman, 72060 Barman, Turkey [3]Department of Physics, Faculty of Sciences and Arts, University of Kahramanmaras Sütcü imam, 46100 Kahramanmaras Turkey [4]Department of Engineering Physics, Faculty of Engineering Physics, University of Gaziantep, 27310 Gaziantep, Turkey

出　　处：《Chinese Physics Letters》2009年第6期254-257,共4页中国物理快报（英文版）

摘　　要：Electrical characteristics of Co/n-Si Schottky barrier diodes are analysed by current- voltage （I- V） and capacitancevoltage （C- V） techniques at room temperature. The electronic parameters such as ideality factor, barrier height and average series resistance are determined. The barrier height 0. 76 eV obtained from the C - V measurements is higher than that of the value 0. 70 eV obtained from the I - V measurements. The series resistance Rs and the ideality factor n are determined from the d ln（ I） /dV plot and are found to be 193.62 Ω and 1.34, respectively. The barrier height and the Rs value are calculated from the H（I） - I plot and are found to be 0.71 eV and 205.95Ω. Furthermore, the energy distribution of the interface state density is determined from the forward bias I - V characteristics by taking into account the bias dependence of the effective barrier height. The interface state density Nss ranges from 6.484×10^11 cm^-2eV^-1 in （Ec - 0.446） eV to 2.801×10^10 cm^-2eV^-1 in （Ec - 0.631） eV, of the Co/n-Si Schottky barrier diode. The results show the presence of a thin interracial layer between the metal and the semiconductor.Electrical characteristics of Co/n-Si Schottky barrier diodes are analysed by current- voltage （I- V） and capacitancevoltage （C- V） techniques at room temperature. The electronic parameters such as ideality factor, barrier height and average series resistance are determined. The barrier height 0. 76 eV obtained from the C - V measurements is higher than that of the value 0. 70 eV obtained from the I - V measurements. The series resistance Rs and the ideality factor n are determined from the d ln（ I） /dV plot and are found to be 193.62 Ω and 1.34, respectively. The barrier height and the Rs value are calculated from the H（I） - I plot and are found to be 0.71 eV and 205.95Ω. Furthermore, the energy distribution of the interface state density is determined from the forward bias I - V characteristics by taking into account the bias dependence of the effective barrier height. The interface state density Nss ranges from 6.484×10^11 cm^-2eV^-1 in （Ec - 0.446） eV to 2.801×10^10 cm^-2eV^-1 in （Ec - 0.631） eV, of the Co/n-Si Schottky barrier diode. The results show the presence of a thin interracial layer between the metal and the semiconductor.

分 类 号：TN311.7[电子电信—物理电子学] TM933.2[电气工程—电力电子与电力传动]