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作 者:张俊安[1,2] 周述涛[1,2] 张正平[1,2] 李儒章[1,2] 高煜寒[1]
机构地区:[1]中国电子科技集团公司第二十四研究所,重庆400060 [2]模拟集成电路国家级重点实验室,重庆400060
出 处:《微电子学》2009年第3期306-310,共5页Microelectronics
摘 要:介绍了采用双R-2R电阻网络结构实现12位电压输出型D/A转换器的设计及激光修调方案。重点分析了运放失调电压对双R-2R电阻网络结构D/A转换器线性误差的影响,并与其他常见的实现双极性电压输出的R-2R电阻网络结构进行比较,给出了理论估计和仿真结果。采用双R-2R电阻网络实现的12位D/A转换器芯片(不包括运放)在带CrSi电阻的8μmCMOS工艺上流片和修调测试。电阻网络芯片和运放芯片采用厚膜混合工艺组装,实现电压输出D/A转换器功能。测试结果显示,设计的电路达到了预期目标。A voltage-mode 12-bit D/A converter with dual R-2R network structure using laser trimming was presented. Influence of the operational amplifier's offset voltage on integral nonlinearity (INL) of dual R-2R network structures was analyzed in particular, and a comparison was made with other common R-2R network structures for bipolar voltage output. Theoretical calculation and simulation results were described. A 12-bit D/A converter IC based on the dual R-2R network was fabricated and trimmed in 8μm CMOS process technology with CrSi resistor. The dual R-2R network chip and the operational amplifier chip were assembled in hybrid IC process to realize voltage output. Measured results showed that the D/A converter reached the design target.
关 键 词:双R-2R电阻网络 电压型D/A转换器 线性误差 激光修调
分 类 号:TN792[电子电信—电路与系统]
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