SiGe HBT小信号等效电路的参数直接提取  

Direct Extraction of Small-Signal Equivalent Circuit Model for SiGe HBTs

作　　者：温佐阳[1] 王军[1] 

机构地区：[1]西南科技大学信息工程学院,绵阳621010

出　　处：《微电子学》2009年第3期434-437,共4页Microelectronics

摘　　要：提出了一种求解硅锗异质结双极型晶体管(SiGe HBT)小信号等效电路模型的参数直接提取方法。整个提取过程使用由小信号等效电路推导出的一系列解析表达式,不使用任何数值优化方法。参数提取结果使用ADS软件仿真验证。结果表明,该方法简单易行,较为精确。A direct parameter extraction method for small-signal equivalent-circuit model of Si-Ge heterojunction bipolar transistors （SiC-e HBTs） was proposed. A set of analytical expressions, which were derived from small-signal equivalentcircuit without any numerical optimization, was used for parameter extraction. The extracted parameters were verified by ADS simulation, and results indicate that the proposed method features simplicity and accuracy.

关 键 词：SIGE HBT 小信号模型 参数提取 

分 类 号：TN322.8[电子电信—物理电子学]