热效应致RLC互连延时变化研究(英文)  

Research on RLC Interconnect Delay Variation Induced by Thermal Effects

作　　者：董刚[1] 徐如清[1] 杨银堂[1] 

机构地区：[1]西安电子科技大学微电子所宽禁带半导体材料与器件教育部重点实验室,西安710071

出　　处：《电子器件》2009年第2期357-360,共4页Chinese Journal of Electron Devices

基　　金：Project supported by the National Natural Science Foundation of China(60606006)

摘　　要：针对热效应导致RLC互连延时增加的现象进行了研究。提出了一种温度依赖的RLC互连延时模型。该模型可以用以量化热效应对互连延时的影响。仿真结果显示,对于RLC互连,温度每增加20℃,延时将会增加5%-6%。Analysis of RLC interconnect ture-dependent RLC interconnect delay thermal effects on interconnect delay. roughly a 5 to 6 percent increase in the delay increase induced by thermal effects is presented. A tempera- model is proposed. The model is applied to quantify the impact of Results show that for each 20℃ increase in temperature there is delay for the RLC interconnect.

关 键 词：RLC互连 延时 热效应 增加 

分 类 号：TN405.97[电子电信—微电子学与固体电子学]