高分子辅助化学溶液沉积制备涂层导体CeO_2缓冲层  

Polymer-Assisted Chemical Solution Deposition for the Preparation of CeO_2 Buffer Layer for Coated Conductors

作　　者：李果[1] 蒲明华[1] 孙瑞萍[1] 王文涛[1] 张欣 武伟[1] 雷鸣[1] 张红[1] 杨烨[1] 程翠华[1] 赵勇[1] 

机构地区：[1]西南交通大学磁浮技术与磁浮列车教育部重点实验室,四川成都610031

出　　处：《稀有金属材料与工程》2009年第A01期411-414,共4页Rare Metal Materials and Engineering

基　　金：国家自然科学基金(50672078);国家杰出青年基金(50588201);国家"973"项目(2007CB616906)

摘　　要：分别采用两种高分子辅助化学溶液沉积方法,在双轴织构的NiW(200)合金基底上制备了涂层导体CeO2缓冲层。结果表明,制得的CeO2缓冲层双轴织构良好,表面无裂纹。比较两种不同的高分子辅助方法,利用聚甲基丙烯酸辅助制得的CeO2表面平整,均方根粗糙度在1μm×1μm的范围内仅为2nm,粗糙度远小于利用聚乙烯醇辅助沉积而得的CeO2缓冲层。Two kinds of polymer addictives have been proposed to assist the deposition of CeO2 buffer layer on the bi-axially textured NiW （200） alloy substrate. The as-grown CeO2 yielded excellent bi-axial texture as well as crack-free surface morphology. Effects of different addictives on the quality of final CeO2 have been investigated, which revealed that CeO2 yielded by polymethacrylic acid （PMAA） assistance displayed a smooth surface with a root mean square roughness of around 2 nm over a surface cut-out of 1 μm× 1μm, which was far inferior compared with that of the CeO2 film deposited by polyvinyl alcohol （PVA） assistance.

关 键 词：CeO2缓冲层 高分子辅助 化学溶液沉积 

分 类 号：O484.1[理学—固体物理] TM26[理学—物理]