高亮度碳纳米管背光源的制备及特性研究  

Fabrication and properties of high brightness carbon nanotube backlight unit

作　　者：陈秀云[1] 叶芸[1] 郭太良[1] 

机构地区：[1]福州大学物理与信息工程学院,福建福州350002

出　　处：《福州大学学报（自然科学版）》2009年第3期372-375,共4页Journal of Fuzhou University(Natural Science Edition)

基　　金：福建省自然科学基金资助项目(A0420001);福州大学博士基金资助项目(826369)

摘　　要：利用酸化及球磨工艺对碳纳米管(Carbon Nanotubes,CNTs)进行表面改性及分散处理,通过丝网印刷技术制备碳纳米管阴极并真空封装碳纳米管背光源原型器件.透射电镜(TEM)及扫描电镜(SEM)分析表明,酸化及球磨处理后的碳纳米管表面产生管壁缺陷并分散均匀,有利于改善碳纳米管场发射性能.通过器件性能测试,亮度高达到5 000 cd.m-2,稳定发射35 h,发射电流无明显衰减.The surface modification of carbon nanotubes （ CNTs ） was conducted and the CNT field emission backlight unit was fabricated in this paper. The surfaces of CNTs were chemical modified by mixed acids and dispersed by ball milling, respectively. The results of TEM and SEM showed that the wall defects are produced on the surface and CNTs are dispersive homogeneously after processing, which could effectually improve the field emission performances of CNTs. Finally, the fabricated CNT field emission baeklight unit achieved high brightness of 5 000 cd· m^-2 and longtime emission of 35 h without significant attenuation by testing.

关 键 词：碳纳米管 场发射 背光源 

分 类 号：TN383[电子电信—物理电子学]