输入输出调谐的低相位噪声CMOS压控振荡器  

A Tuned-Input Tuned-Output Low-Phase-Noise CMOS VCO

作　　者：徐跃[1] 杨英强[1] 

机构地区：[1]南京邮电大学光电工程学院,江苏南京210003

出　　处：《微电子学与计算机》2009年第6期50-53,共4页Microelectronics & Computer

基　　金：南京邮电大学科学基金项目(NY207087)

摘　　要：设计了一个输入输出双调谐的CMOS压控振荡器(VCO),与传统的互补型交叉耦合对结构相比,该VCO谐振回路的有载品质因数得到提高,从而降低了相位噪声.采用CSM 0.25μm RF CMOS工艺设计,使用Cadence Spectre RF工具进行了仿真.仿真结果表明在2.5V的电源电压下,调谐范围为2.24～2.58GHz,达到了14.2%,相位噪声为-128dBc/Hz@1MHz,功耗为15mW.A tuned-input tuned-output CMOS VCO is introduced. Compared with the conventional cross-coupled VCO topology, the loaded Q-factor of the tank circuit is boosted so that the phase noise reduces. The VCA） is designed in CSM0.25μm CMOS RF process and simulated by Cadence SpectreRF tool. The simulation results show that the tuning frequency range is up to 14.2%, from 2.24GHz to 2.58GHz, and the phase noise is - 128dBc/Hz@ 1MHz, and the power consumption is 15mW with supply voltage of 2.5V.

关 键 词：压控振荡器 输入输出调谐 互补型交叉耦合对 相位噪声 

分 类 号：TN43[电子电信—微电子学与固体电子学]