1.55μmSi_(1-x)Ge_(x)/Si光开关与光探测器集成的分析及设计  

Analysis and Design of Optical Switch and Superlattices Photodetector Combination in Si_(1-x)Ge_(x)/Si for 1.55μm Operation

作　　者：李宝军[1] 李国正[1] 刘恩科[1] 

机构地区：[1]西安交通大学微电子工程系

出　　处：《中国激光》1998年第7期596-602,共7页Chinese Journal of Lasers

基　　金：国家自然科学基金(69636040)重点资助项目。

摘　　要：对１．５５μｍ波长的Ｓｉ１－ｘＧｅｘ光波导开关和Ｓｉ１－ｘＧｅｘ／Ｓｉ红外探测器的集成结构进行了系统的理论分析和优化设计。设计结果为：（１）对Ｓｉ１－ｘＧｅｘ光开关，Ｇｅ含量ｘ＝０．０５，波导的内脊高、脊宽和腐蚀深度分别为３，８．５和２．６μｍ，分支角为５～６°。要实现对１．５５μｍ波长光的开关作用，ｐｎ＋结上所需加的正向偏压值应为０．９７Ｖ；（２）对Ｓｉ１－ｘＧｅｘ／Ｓｉ探测器，Ｇｅ含量ｘ＝０．５，探测器由２３个周期的６ｎｍＳｉ０．５Ｇｅ０．５和１７ｎｍＳｉ交替组成厚度为５５０ｎｍ，长度约为１．５～２ｍｍ的超晶格，内量子效率达８０％以上。A systematic analysis and optimum design have been reported for the integration of the  Si 1-x Ge x optical switch and the  Si 1-x Ge x/ Si  infrared detector at λ= 1.55 μm. The optimizing design results are:(1) For the  Si 1-x Ge x optical switch,Ge content x=0.05.Waveguide height,width and etched depth are 3,8.5 and 2.6 μm,respectively,branch angles are 5～6°,and the bias voltage of pn + junction is 0.97 V.(2) For the  Si 1-x Ge x/ Si  infrared detector, Ge content x=0.5. Total thickness of the detector is 550 nm,which consists of 23 periods alternate 6 nm Si 0.5 Ge 0.5 +17 nm Si.The length of the detector is about 1.5￣2 mm.The results show that the internal quantum efficiency of the detector of this structure can be as high as 80%.

关 键 词：Si_(1-x)Ge_(x) 光开关 探测器 

分 类 号：TN256.02[电子电信—物理电子学] TN215.02