硫系非晶半导体薄膜的光致效应  

PHOTOINDUCED EFFECTS IN AMORPHOUS CHALCOGENIDE FILMS

作　　者：刘启明[1] 胡婷[1] 赵修建[1] 干福熹[2,3] 

机构地区：[1]武汉理工大学,硅酸盐材料工程教育部重点实验室,武汉430070 [2]中国科学院上海光学精密机械研究所,上海201800 [3]上海复旦大学信息科学与工程学院,上海200433

出　　处：《硅酸盐学报》2009年第6期937-941,共5页Journal of The Chinese Ceramic Society

基　　金：国家自然科学基金(50772080);教育部“新世纪优秀人才支持计划”(NCET-07-0651);教育部科学研究重点(107078)资助项目。

摘　　要：采用热蒸镀膜方法,在制备出As_2S_3、As_2Se_3、GeS_2、GeSe_2、Ge_(20)As_(25)S_(55)、Ge_(20)As_(25)Se_(55)和Ge_(10)As_(40)S_(20)Se_(30)七个体系硫系非晶态半导体薄膜的基础上,运用X射线粉末衍射、扫描电镜、透射电镜和吸收或透射光谱等测试手段,系统地探讨了薄膜在氩离子激光辐照作用下的光致暗化、光致漂白和光致结晶等光致效应及机理。在As_2S_3、As_2Se_3和Ge_(10)As_(40)S_(20)Se_(30)薄膜中观察到明显的光致暗化效应,而在GeS_2、GeSe_2、Ge_(20)As_(25)S_(55)和Ge_(20)As_(25)Se_(55)薄膜中则观察到明显的光致漂泊效应。经氩离子激光辐照后,在薄膜中均观察到明显的光致结晶现象。Amorphous semiconductor chalcogenide As2S3, As2Se3, GeS2, GeSe2, Ge20As25S55, Ge20As25Ses5, and Ge10AS40S20Se30 films were prepared by the thermal evaporation and studied by the X-ray diffraction, infrared, scanning electron microscope, and transmission electron microscope. With Ar ion laser irradiation, the mechanisms of photodarkening, photobleaching and photocrystallization were discussed. Photodarkening was observed in ASES3 and As2Se3 films, photobleaching was observed in GeS2, GeSe2, Ge20AS25S55, and Ge20As25Se55 films, and photoinduced crystallization was observed in all prepared films after Ar ion laser illumination.

关 键 词：硫系非晶半导体薄膜 光致效应 氩离子激光辐照 

分 类 号：TQ171.734[化学工程—玻璃工业]