Role of Hydrogen Dilution in the Low-Temperature Growth of Nanocrystalline Si:H Thin Films from siH_4/H_2 Mixture  

作　　者：陈城钊 邱胜桦 刘翠青 吴燕丹 李平 余楚迎 林璇英 

机构地区：[1]Department of Physics and Electronic Engineering,Hanshan Normal University [2]Department of Physics,Shantou University

出　　处：《Plasma Science and Technology》2009年第3期297-301,共5页等离子体科学和技术（英文版）

基　　金：supported by the Major State Basic Research and Development Program of China,Ministry of Science and Technology of China (No.G2000028208)

摘　　要：Hydrogenated nanocrystalline silicon thin films were fabricated from Sill4 with H2 dilution at a low substrate temperature of 200℃ by the conventional plasma enhanced chemical vapor deposition technique. A high deposition rate over 0.75 nm/s can be achieved. Raman scattering spectral measurements revealed that the crystalline fraction and grain size increased with the increase in hydrogen dilution ratio. Fourier transform infrared spectrum measurements showed that the hydrogen content decreased and the Si-H bonding configuration changed mainly from Sill to Sill2 with the increase in hydrogen dilution ratio. This suggested that the hydrogen dilution played an important role in the low-temperature growth of nanocrystalline silicon thin film. The growth mechanism is discussed in terms of a surface diffusion model and hydrogen etching effects.Hydrogenated nanocrystalline silicon thin films were fabricated from Sill4 with H2 dilution at a low substrate temperature of 200℃ by the conventional plasma enhanced chemical vapor deposition technique. A high deposition rate over 0.75 nm/s can be achieved. Raman scattering spectral measurements revealed that the crystalline fraction and grain size increased with the increase in hydrogen dilution ratio. Fourier transform infrared spectrum measurements showed that the hydrogen content decreased and the Si-H bonding configuration changed mainly from Sill to Sill2 with the increase in hydrogen dilution ratio. This suggested that the hydrogen dilution played an important role in the low-temperature growth of nanocrystalline silicon thin film. The growth mechanism is discussed in terms of a surface diffusion model and hydrogen etching effects.

关 键 词：hydrogen dilution nanocrystalline Si：H thin film MICROSTRUCTURE 

分 类 号：O484.1[理学—固体物理] TM914.42[理学—物理]