甲酚醛树脂—HMMM负性水型化学增幅抗蚀剂的研究  

THE STUDY ON A KIND OF WATERBASED NEGATIVECHEMICAL AMPLIFIED PHOTORESIST BASED ONNOVOLACHMMM SYSTEM

作　　者：吴兵[1] 李元昌[1] 陈明[1] 林天舒[1] 洪啸吟[1] 焦晓明 程爱萍 陈建军 

机构地区：[1]清华大学化学系 [2]北京化学试剂所

出　　处：《感光科学与光化学》1998年第2期154-160,共7页Photographic Science and Photochemistry

基　　金：国家自然科学基金

摘　　要：本文利用二苯碘盐为光敏产酸物，吩噻嗪为敏化剂，配制了一种甲酚醛树脂———六甲氧基甲基三聚氰胺（ＨＭＭＭ）负性水型紫外化学增抗蚀剂，并研究了光敏产酸物和增感剂对体系光敏性的影响及体系中存在的拉平效应，通过优化后的光刻工艺条件得到了分辨率为１．２４μｍ的光刻图形．? A kind of waterbased negative chemical amplified photoresist, composed of NovolacHMMM as the film former, and diphenyliodonium salt as the photosensitive acid generator and phenothiazine as the photosensitizer, was formulated. The effects of photosensitive acid generators and photosensitizers on the photosensitivity of this system, and the levellingeffect in this system were investigated. Based on our research results, the pattern with linewidth as low as 1.24 μm was gained with the conventional UV photolithography under the optimum parameters.

关 键 词：光刻胶 HMMM 集成电路 化学增幅抗蚀剂 增感剂 

分 类 号：TN405.7[电子电信—微电子学与固体电子学]