电弧气化法制备纳米ITO粉末及高密度ITO靶的研制  

Preparation of ITO Nano Powder by Arc Evaporating and Development of Ultra High Density ITO Target

作　　者：张雪凤[1] 潘震[2] 王政红[1] 邢朋飞[1] 

机构地区：[1]中国船舶重工集团公司第七二五研究所,河南洛阳471039 [2]广州广船国际股份有限公司军代表室,广东广州510000

出　　处：《材料开发与应用》2009年第3期1-3,7,共4页Development and Application of Materials

摘　　要：以纯度为99．99％的纯金属In和Sn为原料，采用电弧气化法制备了单一立方In2O3结构的纳米ITO合金粉末，所制备的粉末以四方和类球形两种形貌存在，粒度主要位于30-70nm，分散性良好；并在此基础上采用常压烧结制备了相对密度高达99．74％，平均电阻率达到1．52×10^-4Ω·cm，结构成份均匀，晶粒尺寸5—10μm左右的超高密度ITO靶材。ITO nano-powders was prepared by arc evaporating with 99.99% In and Sn as raw materials. The prepared powder has single cubic In2O3 phase in tetragonal and near-sphere pattern. The particle size of the powder is 30 -70nm and the dispersity of the powder is good. ITO target with grain size of 5 - 10μm was prepared with the powder by non-pressure sintefing. The ITO target has a homogeneous structure , a relative density of 99.74%, and a average resistivity of 1.52 × 10^-4Ω·cm.

关 键 词：电弧气化法 纳米 ITO粉 ITO靶 

分 类 号：TB383[一般工业技术—材料科学与工程]