声子-电子耦合效应对半导体表面感应电势的影响  

EFFECT OF PHONON ELECTRON COUPLING ON THE SURFACE WAKE POTENTIAL *

作　　者：孟显[1] 王友年[1] 

机构地区：[1]大连理工大学三束材料改性国家重点实验室

出　　处：《物理学报》1998年第7期1155-1160,共6页Acta Physica Sinica

基　　金：国家自然科学基金;国家教育委员会重点科学技术项目

摘　　要：根据“镜反射”模型，研究快速运动的离子在平行于重掺杂半导体表面飞行时产生的表面感应电势和能量损失，并采用一种局域介电函数，研究声子电子耦合效应对感应电势和能量损失的影响．Abstract The wake potential and energy loss of a swift ion moving parallel to a heavily doped semiconductor surface in vacuum are studied with the specular reflection model and the dielectric response theory. The phonon electron coupling effect on the surface wake potential and the energy loss is investigated by using a frequency dependent dielectric function. We find that there are two branches of phonon electron coupling excitations which contribute to the wake potential and the energy loss. Numerical results show that the oscillation form of the wake potential is obviously influenced by the phonon electron coupling effect.

关 键 词：半导体 声子电子效应 离子杂杂 表面感应电势 

分 类 号：TN305.3[电子电信—物理电子学]