有机复合薄膜中超高密度信息存储研究  

STUDY OF ULTRAHIGH DENSITY DATA STORAGE ON ORGANIC COMPLEX THIN FILMS

作　　者：马立平[1,2,3] 杨文军[1,2,3] 薛增泉[1,2,3] 陈慧英[1,2,3] 庞世瑾[1,2,3] 

机构地区：[1]中国科学院物理研究所和凝聚态物理中心北京真空物理实验室 [2]北京大学化学系 [3]北京大学电子学系

出　　处：《物理学报》1998年第7期1229-1232,共4页Acta Physica Sinica

摘　　要：利用大气中工作的扫描隧道显微镜，在真空蒸发方法制备的有机复合薄膜上，通过施加电压脉冲法做出了信息点阵，信息点大小为１３ｎｍ．电流电压特性表明：存储区表现为导体特性，非存储区为绝缘体特性．信息存储实验表明：相邻两个信息记录点的间距可小于２ｎｍ，信息存储密度可高达２５×１０１３ｂｉｔ／ｃｍ２．Abstract  Crystalline organic complex thin films have been performed by vacuum evaporation method on HOPG substrates.Using Scanning Tunneling Microscope storage,array has been made on the film by applying voltage pulses between the tip and the substrate.The recording marks are 1 3nm in diameter.Voltage current characterization shows that the recorded region has a conductor behavior while the unrecorded regions shows an insulator behavior.It is confirmed from experiments that the distance between two recording marks can be as short as 2nm,which corresponds to the storage density of 2 5×10 13 bit/cm 2.The mechanism about the recording is briefly discussed. 

关 键 词：超高密度 信息存储 薄膜 有机复合薄膜 

分 类 号：O484[理学—固体物理]