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机构地区:[1]第四军医大学唐都医院整形科,西安710038
出 处:《科学技术与工程》2009年第13期3616-3620,共5页Science Technology and Engineering
基 金:国家自然科学基金(30672180)资助
摘 要:电压依赖性离子通道是神经元和其他可兴奋细胞赖以产生可传导电信号的结构基础。实验观察兔坐骨神经在不同损伤电压情况下,背根神经节(DRG)上离子通道的表达变化。采用100只健康成年中国家兔分为阴性对照组、50V、110V和220V等4个电损伤组,取标本时间分为立即组、4周组。用免疫组织化学方法半定量分析DRG上钠钾离子通道的表达变化。结果电损伤后立即与4周后背根神经节(DRG)上离子通道的表达降低,且与电压呈负相关,220V4周时无明显恢复。说明离子通道在神经电损伤后的溃变程度和再生恢复取决于电压和时间。The sciatic nerve of rabbit was injured by electrical current experimentally, after that the relative dorsal root ganglion(DRG) ion channel expression was measured for the study of the electrical injury mechanism. The sciatic nerve was injured with different electrical current, and obtain the samples in different observation period. Ira- munohistochemistry in semi quantitative analysis was detected the DRG ion channel expression. After the electrical injury, the DRG ion channel expression is in a decreasing order, furthermore, it is inverse correlation with voltage and time. It is concluded the degeneration and reactivation progress of ion channel after electrical injury depend on voltage and time.
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