相变随机存储器存储单元结构设计  

Configuration design of the phase change random access memory cell

作　　者：胡作启[1] 袁成伟[1] 李兰[1] 

机构地区：[1]华中科技大学电子科学与技术系,湖北武汉430074

出　　处：《华中科技大学学报（自然科学版）》2009年第6期89-92,共4页Journal of Huazhong University of Science and Technology(Natural Science Edition)

基　　金：总装备部预研基金资助项目

摘　　要：为改善写信息脉冲电流过高而制约相变随机存储器实用化的状况,根据自下而上、边缘接触式存储单元结构的特点,建立了存储单元脉冲电流写信息的二维仿真模型,用有限元法解电、热传导微分方程模拟了存储单元的温度分布.结果证实,边缘接触式结构具有更低的写信息脉冲电流,是降低相变随机存储器写信息脉冲电流幅值的一种有效存储单元结构.To reduce the high writing current that restricting the phase change random access memory within practical use, a two-dimensional simulation model was developed based on the structural characteristics of bottom-up and edge-contact memory cells. Thermal distribution of memory cells was simulated by solving electricity and heat conduction differential equations using finite element method. Simulation results show that edge-contact memory cell has lower writing current and it is an effective memory cell to reduce the writing current of the phase change random access memory.

关 键 词：相变存储器 存储单元结构 结构设计 热分析 有限元法 

分 类 号：TP343[自动化与计算机技术—计算机系统结构]