利用金刚石纳米粉引晶方法制备高硼掺杂金刚石薄膜  

High B-doped Diamond Film Grown by Seeding with Diamond Powder

作　　者：杨传径[1] 陈庆东[1] 杜凯[1] 高春晓[2] 刘才龙[2] 

机构地区：[1]河南科技大学理学院,河南洛阳471003 [2]吉林大学超硬材料国家重点实验室,吉林长春130012

出　　处：《河南科技大学学报（自然科学版）》2009年第3期15-17,22,共4页Journal of Henan University of Science And Technology:Natural Science

基　　金：国家自然科学基金项目(40473034)

摘　　要：利用金刚石纳米粉引晶方法在SiO2衬底上合成了高硼掺杂金刚石薄膜,并利用范德堡法、扫描电镜、激光拉曼方法对不同掺杂量下生长的样品进行了表征。SEM和拉曼谱分析表明,少量掺杂时有利于提高金刚石薄膜的质量,但是随着掺杂量的增加,金刚石薄膜质量开始明显下降;并且拉曼谱峰在500cm-1和1200cm-1开始加强,呈现重掺杂金刚石薄膜的典型特征。其电导率随着温度升高而升高,表明导电性质为半导体导电。High B-doped diamond film was deposited successfully by seeding with the diamond powder of 5nm average size and the effects of B-concentration on diamond film deposited were studied through SEM,Raman scattering and measuring conductance with four probe array method.The doped diamond film quality with 0.5mg is better than non-doped diamond film.But the doped diamond film quality falls with increasing of B-powder through Raman spectroscopy.The Raman spectroscopy increases at 500cm-1 and 1200cm-1 with B-concentration increasing,which is the characteristic of high doped diamond film.The conductance of doped-diamond film increases with temperature increasing which proves it is semiconductor.

关 键 词：热丝CVD 纳米引晶 掺杂金刚石薄膜 

分 类 号：TB43[一般工业技术]