激光诱导硅等离子体的时间分辨发射光谱分析  

Time-resolved spectrum analyses of laser induced Si-plasma emission

作　　者：王娟[1] 陈传松[1] 满宝元[1] 郭娟[1] 周贤明[1] 

机构地区：[1]山东师范大学物理与电子科学学院,济南250014

出　　处：《激光杂志》2009年第3期20-21,共2页Laser Journal

基　　金：国家自然科学基金(10874103);山东省自然科学基金(Y2007A05)资助课题

摘　　要：文中探测了硅靶在波长为1.064μm、脉宽10ns的脉冲激光辐照下等离子体时间分辨发射光谱,分析了电子温度、电子密度和连续谱的演化。利用能级寿命和连续谱最大强度的出现时间解释了NⅡ399.5nm、SiⅡ385.6nm和SiⅡ386.3nm谱线强度最大值的出现时间。NⅡ399.5nm谱线的寿命比Si II谱线的寿命要短得多,我们认为这和它们的产生过程有关。在1Pa的背景气压下能够探测到Si III和Si IV的光谱线,而在1.01×105Pa时却无法分辨。Time- resolved emission spectrum from laser-reduced plasmas by 1.064μm,10 ns laser pulse＇s irradiation on silicon target surface is recorded and analyzed. The evolvement of electron temperature, electron density and continuous spectra is investigated. The appearance times of maximal signal of NⅡ 399. 5 nm, SiⅡ 385.6 nm and SiⅡ 386.3 nm can be explained by their lifetimes of upper energy level and appearance times of maximal signal of continuous spectra. It is found that the lifetime of N Ⅱ 399.5 nm is shorter than that of Si Ⅱ, which is owing to their different generation processes. In addition, spectrum lines of Si Ⅲ and Si Ⅳ are observed at 1 Pa,but can＇t be observed at 1.01×10^5 Pa.

关 键 词：激光诱导等离子体 等离子体光谱 时间分辨 硅 

分 类 号：TN248.1[电子电信—物理电子学]