退火温度对二氧化钒薄膜红外透过率的影响  

Influence of Annealing Temperature on Infrared Transmittance of VO_2 Film

作　　者：殷智勇[1] 汪岳峰[1] 董伟[1] 李刚[1] 张琳琳[1] 

机构地区：[1]军械工程学院光学与电子工程系,河北石家庄050003

出　　处：《红外》2009年第6期20-22,共3页Infrared

摘　　要：针对提高用溶胶-凝胶法制备的VO_2薄膜的红外透过率的问题,提出了制备时的最佳退火温度。简要介绍了用无机溶胶凝胶法制备VO_2薄膜的过程,对制备的VO_2薄膜进行了差示扫描量热(DSC)、X射线电子能谱仪(XPS)测试,分析了VO_2薄膜的成分及相变温度。根据瑞利-高斯散射公式,通过散射截面与粒子密度计算和不同退火温度下薄膜透过率的测试,重点讨论了退火温度、晶粒尺寸和红外透射率三者的关系。To improve the infrared transmittance of VO2 film fabricated by using a Sol-Gel method, the optimal annealing temperature when the VO2 film is fabricated is proposed. The fabrication process of the VO2 film using an inorganic Sol-Gel method is presented in brief. The fabricated VO2 film is tested by using a Differential Scanning Calorimeter （DSC） and a X-ray Photoelectron Spectroscopy （XPS）. The composition and phase transition temperature of the VO2 film are analyzed. According to the Rayleigh- Gans formulation, the scattering cross-section and particle density are calculated and the transmittance of the film is tested at different annealing temperatures. The relationship among annealing temperature, crystalline size and infrared transmittance is mainly discussed.

关 键 词：退火温度 相变 二氧化钒 

分 类 号：TN213[电子电信—物理电子学]